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-100mA / -50V Digital transistors (with built-in resistors)
DTA124GKA
Applications Inverter, Interface, Driver Features 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2)Only the on / off conditions need to be set for operation, making the device design easy. 3)Higher mounting densities can be achieved. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Packaging specifications
Package Packaging type Code
Part No. SMT3
Dimensions (Unit : mm)
DTA124GKA
2.9 0.4
(3)
1.6 2.8
1.1 0.8
(2)
(1)
0.3Min.
0.95 0.95 0.15
ROHM : SMT3 EIAJ : SC-59
1.9
(1) GND (2) IN (3) OUT
Abbreviated symbol : K15
Inner circuit
Taping
T146 3000 -
B R C
Basic ordering unit (pieces)
DTA124GKA
Absolute maximum ratings (Ta=25C)
Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -50 -50 -5 -100 200 150 -55 to +150 Unit V V V V mA
C C
E E : Emitter C : Collector B : Base
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
R=22k
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c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C
DTA124GKA
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency
Characteristics of built-in transistor.
Data Sheet
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT
Min. -50 -50 -5 - -140 - 56 15.4 -
Typ. - - - - - - - 22 250
Max. - - - -0.5 -260 -0.3 - 28.6 -
Unit V V V A A V - k MHz IC=-50A IC=-1mA IE=-330A VCB=-50V VEB=-4V
Conditions
IC=-10mA, IB=-0.5mA IC=-5mA, VCE=-5V - VCE=-10V, IE=5mA, f=100MHz
Electrical characteristic curves
1k 500
Ta=25C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
1 500m 200m 100m 50m 20m 10m 5m 2m
Ta=100C
IC/IB=20/1
Ta=100C Ta=25C
DC CURRENT GAIN : hFE
200 100
Ta= 40C
50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m
Ta= 40C
1m 100 200 500 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. Collector current
Fig.2 Collector-Emitter saturation voltage vs. Collector current
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c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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